U.S. Army selects Navitas to develop next-generation 10 kV SiC IGBT technology

Bitget2026/09/28 20:15

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Navitas won a U.S. Army-backed ALATTIS award to develop next-generation 10 kV silicon carbide power semiconductors.
Program targets 10 kV SiC IGBTs with associated PiN diodes, extending its SiC roadmap beyond MOSFET products.
Work will design, fabricate, test prototypes, aiming to validate a new domestic manufacturing process for ultra-high-voltage SiC devices.
Effort builds on its GeneSiC portfolio spanning 650 V to 6.5 kV, anchored by its trench-assisted planar device architecture.

Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Navitas Semiconductor Corporation published the original content used to generate this news brief via GlobeNewswire (Ref. ID: 202609281615PRIMZONEFULLFEED9835322) on September 28, 2026, and is solely responsible for the information contained therein.

Disclaimer: The content of this article solely reflects the author's opinion and does not represent the platform in any capacity. This article is not intended to serve as a reference for making investment decisions.

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U.S. Army selects Navitas to develop next-generation 10 kV SiC IGBT technology

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